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Study on Preparing β-Ga2O3 Films with Temperature-Controlled Buffer Layer by RF Magnetron Sputtering
Yi Liu1, Tinglin He1 and Sufen Wei1*
1School of Ocean Information Engineering, Jimei University, Xiamen 361021, China
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Abstract:
β-Ga2O3 thin films were prepared on (0006) sapphire substrates by RF magnetron sputtering. Under the conditions of sputtering power of 80 W, time of 10 min, and total flow rate of 40 sccm in oxygen and argon atmosphere (2.5 % oxygen ratio). Different preparation temperatures were used to conduct layering by temperature modulation. A homogenous β-Ga2O3 buffer layer was grown first, and then the second β-Ga2O3 film was grown on top of it. When the stratified sputtering of different temperature combinations was completed, high-temperature thermal annealing with the same parameters was performed. The effects on the structure, surface morphology, and optical properties of β-Ga2O3 thin films were compared and analyzed when using the preparation sequence of the homogenous buffer layer and the top layer at different temperatures after annealing. Finally, based on the stratified preparation temperature parameters, the optimal stratified temperature parameters were summarized.
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Keywords: Gallium oxide, RF magnetron sputtering, Temperature, Buffer layer, Thermal annealing
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Received:July 29, 2022; Revised:August 17, 2022; Accepted:August 29, 2022; Published:September 30, 2022
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*Corresponding author; e-mail: weisufen@jmu.edu.
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Citation:Liu, Y.; He, T.; Wei, S.Study on Preparing β-Ga2O3 Films with Temperature-Controlled Buffer Layer by RF Magnetron Sputtering. Applied Functional Materials 2022, 2, 24-29. https://doi.org/10.35745/afm2022v02.03.0003
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Copyright: ©
2022
The Author(s). Published with license by IIKII, Singapore. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (CC BY), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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