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Laser-Induced Selective Metallization on Aluminum Nitride for Fine Line Circuits
Hong-Bing Tsai1*, Syun-Yi Lai1, Quoc-Thai Pham1 and Hung-Ta Wu1
1Department of Chemical and Materials Engineering, National Ilan University; Yilan City, 260007, Taiwan (R.O.C.)
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Abstract:
The technology of laser direct selective metallization on aluminum nitride substrate was investigated for manufacturing fine line circuits. In laser direct structuring, laser activation and electroless copper plating were used. The feasibility was evaluated by analyzing the sieving, contrast, and fine linewidth patterns, and the results showed that the width of the feasible fine reached 100 μm. A near-field communication (NFC) antenna circuit of the width of 400 μm was fabricated on the aluminum nitride substrate. The measured resonance frequency was close to the NFC specification frequency.
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Keywords: Laser direct structuring, Aluminum nitride, Laser activation, Electroless copper plating, Antenna circuit
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Received:January 01, 2024; Revised:February 01, 2024; Accepted:February 15, 2024; Published:March 30, 2024
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*Corresponding author; e-mail: hbtsai@niu.edu.tw
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Citation:Tsai, H.B.; Lai, S.Y.; Pham, Q.T.; Wu, H.T.Laser-Induced Selective Metallization on Aluminum Nitride for Fine Line Circuits. Applied Functional Materials 2024, 4, 1-6. https://doi.org/10.35745/afm2024v04.01.0001
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Copyright: ©
2024
The Author(s). Published with license by IIKII, Singapore. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (CC BY), which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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