Open Access
Article
Using Different Methods to Measure the Optical Energy Bandgap of Un-annealed and Annealed Ga2O3 Films
by Ting-Yu Lin, Sang-Yuan Han, Cheng-Yi Huang, Cheng-Fu Yang* and Sufen Wei
AFM 2021, Vol 1, Issue 1, 25-30, https://doi.org/10.35745/afm2021v01.01.0004 - Published on August 30, 2021
Abstract
In this study, electron beam (E-beam) was used to deposit Ga2O3 films on the sapphire (Al2O3) substratest, then Ga2O3 films were divided three groups, unannealed, annealed at 850 oC, and annealed at 950 oC, respectively. After that, three different methods were investigated to find the optical energy bandgap of un-annealed and annealed Ga2O3 films. First was used n&k analyzer to measure all the optical energy bandgaps of un-annealed and annealed Ga2O3 films directly; Second, all the measured tra...